PART |
Description |
Maker |
DTA125TA DTA143XLA DTA143XAA DTA144GFA DTB114GF DT |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SC-71 TRANSISTOR | 50V V(BR)CEO | 20MA I(C) | SC-71 晶体管| 50V五(巴西)总裁| 100mA的一c)|园区 TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71 晶体管| 50V五(巴西)总裁| 500mA的一(c)|律师- 71 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71VAR 晶体管| 50V五(巴西)总裁| 100mA的一(c)|资深大律师,71VAR TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SC-71 晶体管| 50V五(巴西)总裁| 30mA的一(c)|律师- 71 TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SIP 晶体管| 50V五(巴西)总裁| 30mA的一c)|园区 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71 晶体管| 50V五(巴西)总裁| 100mA的一(c)|律师- 71 TRANSISTOR | 50V V(BR)CEO | 50MA I(C) | SIP 晶体管| 50V五(巴西)总裁| 50mA的一(c)|园区 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 晶体管| 50V五(巴西)总裁| 100mA的一(c)| SOT - 23封装
|
Air Cost Control Delta Electronics, Inc. Yageo, Corp. Rohm Co., Ltd. Electronic Theatre Controls, Inc. Intel, Corp. Diodes, Inc.
|
2SD1061 2SB825 2SB825Q |
50V/7A Switching Applications 50V/7A开关应 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-220AB
|
Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
|
CDD2395F CDD2395 |
2.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 60 - 320 hFE. TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-220AB
|
Continental Device India Limited
|
DTC124TC DTA124TC DTA1D3RE DTC1D3RE DTA114WC DTC11 |
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SOT-23 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | TO-92VAR TRANSISTOR | SIP 晶体管| 50V五(巴西)总裁| 100mA的一c)| SOT - 23封装 TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP 晶体管| 50V五(巴西)总裁| 500mA的一(c)|园区 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五(巴西)总裁| 100mA的一c)|的SOT - 23VAR TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SOT-23 晶体管| 50V五(巴西)总裁|提供70mA一(c)| SOT - 23封装 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 晶体管| 50V五(巴西)总裁| 100mA的一(c)| SOT - 23封装 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP 晶体管| 50V五(巴西)总裁| 100mA的一(c)|园区 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五(巴西)总裁| 100mA的一(c)|的SOT - 23VAR
|
FCI Analog Devices, Inc. Rohm Co., Ltd. TE Connectivity, Ltd. Diodes, Inc. Kingbright, Corp.
|
2SA1012 2SA1012O 2SA1012Y |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-220AB POWER TRANSISTORS(5A/50V/25W) POWER TRANSISTORS(5A,50V,25W)
|
MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
ZXT12N50DX ZXT12N50DXTA ZXT12N50DXTC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR Dual NPN Low Sat Transistor
|
Diodes Incorporated ZETEX[Zetex Semiconductors]
|
IRF7103Q IRF7103QTR IRF7103QN |
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO Power MOSFET(Vdss=50V) 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package 50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
CD9014C CD9014D CD9014D1 CD9014D3 CD9014E CD9014D2 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 - 600 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 100 - 300 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 150 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 1000 hFE NPN SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
2SB1184 2SB1243 2SB1243R 2SB1243Q 2SB1184P |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252AA 晶体管|晶体管|进步党| 50V五(巴西)总裁| 3A条一(c)|52AA 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | SIP Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
HIROSE ELECTRIC Co., Ltd. ROHM
|
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82 晶体管|晶体管|叩| 100V的五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 180V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁| 6A条一c)|2 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五(巴西)总裁|甲一(c)| STR-5/16
|
Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
|
DDTA114ECA DDTA115ECA DDTA123ECA DDTA124ECA DDTA14 |
CAP .0082UF 50V PPS FILM 1206 5% PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR 进步党预偏置信号小的SOT - 23表面贴装晶体 CAP .22UF 50V PPS FILM ECH-S
|
DIODES[Diodes Incorporated] Diodes, Inc. Diodes Inc.
|
CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|